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A review of optical networking technologies supporting 5G communication infrastructure

  • Published: 13 March 2021
  • Volume 28 , pages 459–467, ( 2022 )

Cite this article

  • Suzana Miladić-Tešić   ORCID: orcid.org/0000-0001-5737-2778 1 ,
  • Goran Marković   ORCID: orcid.org/0000-0003-1271-9277 2 ,
  • Dragan Peraković   ORCID: orcid.org/0000-0002-0476-9373 3 &
  • Ivan Cvitić   ORCID: orcid.org/0000-0003-3728-6711 3  

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The advanced communication networks require heterogeneous emerging technologies to be combined while enabling various future applications. The integration of 5G wireless and optical technology is considered an unavoidable approach to reach this goal. Based on 5G mobile communications and densification of cells, the upcoming idea of smart city becomes feasible and put on a lot of attention from the research community due to its effect on everyday life’s improvement and modernization. The concept of a smart city should support everything from electrical grids to traffic management and requires the transmission of a huge amount of data. Smart city planning with a reliable communication infrastructure that can provide stringent network requirements is unfeasible without the joint of optical and wireless technologies. This paper aims to provide an overview of recent developments of advanced optical networking to provide 5G transport networks and their applications in connecting a huge number of devices in future smart city infrastructures. The implementation of optical technologies in 5G core networking open numerous questions of how wireless and optical can coexist to provide sophisticated future applications, such as the smart city concept. Within this research, we will provide the answers to some of the key related questions.

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Miladić-Tešić, S., Marković, G., Peraković, D. et al. A review of optical networking technologies supporting 5G communication infrastructure. Wireless Netw 28 , 459–467 (2022). https://doi.org/10.1007/s11276-021-02582-6

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research paper on optical communication

Journal of Materials Chemistry C

Stable and self-healing perovskite for high-speed underwater optical wireless communication.

Greenlight experiences minimal attenuation in water, rendering it indispensable for underwater wireless optical communication (UWOC). Among green light emitters, perovskite materials stand out due to their exceptional optical properties and cost-effectiveness, serving as reliable alternatives to easily manufactured green light sources. However, in underwater environments, perovskites are susceptible to structural damage, which can lead to communication device failures. In this study, we introduce an innovative perovskite-based UWOC system, where the perovskite light source possesses the ability to autonomously self-repair. We achieve this by implementing F-ion modification on CsPbBr3 QWs, significantly enhancing perovskite thermal stability. Subsequently, we incorporate CsPbBr3:F QWs into an all-dipole fluorine, imparting self-healing properties to the device. This results in the creation of a robust system capable of withstanding underwater conditions. This system can seamlessly integrate into a UWOC setup, achieving high-speed underwater communication. Remarkably, the device not only sustains stable operation in underwater environments for over a week but also fully restores communication speed after self-repair from complete breakage. Our innovative design provides substantial support for the future development of perovskite-based underwater communication technology and optoelectronics devices.

  • This article is part of the themed collection: Journal of Materials Chemistry C HOT Papers

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research paper on optical communication

X. Xu, Y. Fu, Y. Kuai, Z. Shi, C. Li, Z. Hu, Z. Cao and S. Li, J. Mater. Chem. C , 2024, Accepted Manuscript , DOI: 10.1039/D3TC04809H

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Department of Mathematics

Prof. osin publishes in annals of mathematics.

research paper on optical communication

Prof. Denis Osin recently published a paper in Annals of Mathematics , widely considered the most prestigious journal in pure mathematics. The paper, “Wreath-like products of groups and their von Neumann algebras I: W*-superrigidity” was written with Adrian Ioana (UCSD), Ionut Chifan (U Iowa), and a former Vanderbilt Ph.D. student Bin Sun (Michigan State U).

The topic of the paper is von Neumann algebras. The basis of the Heisenberg uncertainty principle, and more generally quantum mechanics, is that the position and momentum operators do not commute. The theory of von Neumann algebras, developed in the 1940s, provides the mathematical basis for this principle. They are named after John von Neumann, the legendary polymath, famous for his work on the Manhattan project, among many other achievements. Some of the key breakthroughs on von Neumann algebras were achieved by Alain Connes and Vaughan Jones, two Fields medalists and former faculty members at Vanderbilt. As such, von Neumann algebras are central to mathematics and physics.

Von Neumann algebras, commonly referred to as non-commutative measure spaces, were originally called “rings of operators”. Besides their relation to physics, they serve as foundational objects in several areas of contemporary mathematics, including representation theory, dynamical systems, and quantum field theory. In their foundational work on the subject, Francis Murray and von Neumann suggested a way to assign a ring of operators (or von Neumann algebra) to every countable group.

Generally, the von Neumann algebra associated with a group tends to retain little to no information about the algebraic structure of the group. The ultimate manifestation of this phenomenon is the famous theorem of Alain Connes asserting that all groups from a broad class (specifically, all amenable groups with infinite conjugacy classes) give rise to the same von Neumann algebra. On the other hand, Connes conjectured in 1980 that the isomorphism class of a group satisfying a certain representation-theoretic property, known as Kazhdan’s property (T), is uniquely determined by its von Neumann algebra.

Despite significant recent progress in understanding von Neumann algebras for groups, Connes’ conjecture remained wide open. Moreover, neither a counterexample nor a single non-trivial example of a group satisfying this conjecture had been known until now. In their paper, Osin, Ioana, Chifan, and Sun proved Connes’ conjecture for a wide class of groups having a particular algebraic structure. Examples of such groups naturally arise in the context of the algebraic analog of Dehn surgery in 3-manifolds, introduced by Osin in 2007.

Prof. Osin and his collaborators intend to apply the technique developed in their first paper to address other open problems in operator algebras. In particular, their second paper “Wreath-like products of groups and their von Neumann algebras II: Outer automorphisms” (available on the arXiv here ) makes progress towards another well-known conjecture proposed by Vaughan Jones. This work was supported by a recent NSF Focused Research Group grant, shared by Vanderbilt, UCSD, and the University of Iowa.

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  • Published: 21 February 2024

A 3D nanoscale optical disk memory with petabit capacity

  • Miao Zhao   ORCID: orcid.org/0000-0002-4941-4699 1   na1 ,
  • Jing Wen   ORCID: orcid.org/0000-0003-3558-2322 2   na1 ,
  • Qiao Hu   ORCID: orcid.org/0000-0001-6187-958X 1 ,
  • Xunbin Wei 3 , 4 ,
  • Yu-Wu Zhong   ORCID: orcid.org/0000-0003-0712-0374 5 ,
  • Hao Ruan   ORCID: orcid.org/0009-0003-3693-653X 1 &
  • Min Gu   ORCID: orcid.org/0000-0003-4078-253X 6 , 7  

Nature volume  626 ,  pages 772–778 ( 2024 ) Cite this article

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  • Laser material processing
  • Nanophotonics and plasmonics
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  • Sub-wavelength optics

High-capacity storage technologies are needed to meet our ever-growing data demands 1 , 2 . However, data centres based on major storage technologies such as semiconductor flash devices and hard disk drives have high energy burdens, high operation costs and short lifespans 2 , 3 . Optical data storage (ODS) presents a promising solution for cost-effective long-term archival data storage. Nonetheless, ODS has been limited by its low capacity and the challenge of increasing its areal density 4 , 5 . Here, to address these issues, we increase the capacity of ODS to the petabit level by extending the planar recording architecture to three dimensions with hundreds of layers, meanwhile breaking the optical diffraction limit barrier of the recorded spots. We develop an optical recording medium based on a photoresist film doped with aggregation-induced emission dye, which can be optically stimulated by femtosecond laser beams. This film is highly transparent and uniform, and the aggregation-induced emission phenomenon provides the storage mechanism. It can also be inhibited by another deactivating beam, resulting in a recording spot with a super-resolution scale. This technology makes it possible to achieve exabit-level storage by stacking nanoscale disks into arrays, which is essential in big data centres with limited space.

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research paper on optical communication

Data availability

The data that support the findings of this study are available at https://doi.org/10.57760/sciencedb.13342 (ref. 50 ).  Source data are provided with this paper.

Code availability

The MATLAB code used in this study is available at https://doi.org/10.57760/sciencedb.13342 (ref. 50 ).

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Acknowledgements

J.W. acknowledges the financial support from the National Natural Science Foundation of China (NSFC, project no. 62175153). M.G. acknowledges the support from the Science and Technology Commission of Shanghai Municipality (project no. 21DZ1100500) and the Shanghai Municipal Science and Technology Major Project. M.G., J.W. and H.R. acknowledge the financial support from the Shanghai Municipal Science and Technology Commission Innovation Action Plan (project no. 18DZ1100400). M.G. and H.R. acknowledge the financial support from the National Key R&D Program of China (project no. 2021YFB2802000). Y.-W.Z. acknowledges the support from the National Natural Science Foundation of China (NSFC, project no. 21925112). X.W. acknowledges the support from the National Natural Science Foundation of China (NSFC, project no. 62027824). We thank Z. Gan from Huazhong University of Science and Technology for the adjustment of the optical writing set-up. We thank F. Liu from the Integrated Laser Microscopy System and Computation System at the National Facility for Protein Science in Shanghai (NFPS), Zhangjiang Lab for providing usage and technical support for the STED microscope. We thank H. H. Li and E. K. Zhang from Leica Microsystems (Shanghai) Trading Company Ltd for time-resolved photoluminescence detection and emission spectrum measurement. We thank D. Y. Lei and S. Y. Jin from the City University of Hong Kong for the discussion of the measurement of fluorescence lifetime in microscale. We thank H. X. Xu from Wuhan University, and D. Pan and C. J. Zhang from East China Normal University for helping with the Raman measurement in microscale. We thank T. C. Tang from the University of Shanghai for Science and Technology for data baseline cutting in the Raman measurement. We thank W. X. Cao from the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences for joining the shelf lifetime measurement of the sample.

Author information

These authors contributed equally: Miao Zhao, Jing Wen

Authors and Affiliations

Photonic Integrated Circuits Center, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China

Miao Zhao, Qiao Hu & Hao Ruan

Engineering Research Center of Optical Instrument and Systems, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, Shanghai, China

Biomedical Engineering Department, Peking University, Beijing, China

School of Biomedical Engineering, Anhui Medical University, Hefei, China

Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, CAS Research Education Center for Excellence in Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China

Yu-Wu Zhong

Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai, China

Zhangjiang Laboratory, Shanghai, China

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Contributions

M.G., H.R. and J.W. conceived the original concept and initiated the work. J.W., M.Z. and Q.H. performed the theoretical analysis and conducted the simulation. M.Z. and J.W. synthesized the material. M.Z., J.W. and H.R. developed the set-up and performed the measurements. J.W., M.Z., H.R., Y.-W.Z. and M.G. analysed the data and explained the mechanism. M.G., J.W., H.R., M.Z. and Y.-W.Z. discussed the results. J.W., M.G., M.Z., X.W. and H.R. wrote the paper and all authors reviewed the paper.

Corresponding authors

Correspondence to Jing Wen , Hao Ruan or Min Gu .

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Competing interests.

The authors declare no competing interests.

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Nature thanks Peter Kazansky, Xiewen Wen and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.

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Extended data figures and tables

Extended data fig. 1 optical setup of dual-beam volumetric nanoscale writing..

L1, L2, L3, and L4, collimation lenses; L5, collection lens; L6, tube lens; PH1 and PH2, pinholes; HWP, half-wave plate; QWP, quarter-wave plate; VPP, vortex-phase plate; DC1 and DC2, dichroic filters; S, electronic shutter; M, mirror; BS, beam-splitter; MMF, multi-mode fibre; and CCD, charged coupled device. Source images of the optical components provided courtesy of Thorlabs, Inc.

Extended Data Fig. 2 Summary of an aggregation-induced emission dye-doped photoresist (AIE-DDPR) film.

a–c , Fluorescence images of the ODS medium doped with tetraphenylethene (a) , no AIEgens (b) and hexaphenylsilole (c) obtained by the Leica microscope. d–f , Intensity profiles (d) , (e) and (f) are extracted from (a–c) . g , Transmission electron microscopy image of a cured AIE-DDPR film. h , Expansion of the blue-boxed area in (g) . i , Transmittance of a cured AIE-DDPR film with a thickness of 130 µm (blue line) and a pure silica substrate with a thickness of 980 µm (red line).

Source data

Extended data fig. 3 aggregation-induced emission dye-doped photoresist (aie-ddpr) recording medium in colloidal and solid states and fluorescence images of the volumetric writing with different layer spacings..

a , AIE-DDPR in the colloidal state under white-light illumination (left) and ultraviolet (UV)-light illumination (right). b , Cured spin-coated AIE-DDPR film under white-light illumination (left) and UV-light illumination (right). c , Base disc comprising the substrate. d , Disc spin-coated with a film of AIE-DDPR that has been cured (a blank disc yet to be written with information). e–g , There was strong cross-talk of the signal when the layer spacing was 0.5 μm (e) or 0.7 μm (f) , and no cross-talk of the signal when the layer spacing was 1 μm (g) .

Extended Data Fig. 4 Binary bits of the encoded image (a) and the recalled image (b) in Fig. 2e .

In a , ‘1’ and ‘0’ represent the writing beam being ‘on’ and ‘off’ which are controlled by the electronic shutter in Extended Data Fig. 1 . In b , ‘1’ and ‘0’ represent the fluorescent signal from the recording medium being ‘on’ and ‘off’.

Extended Data Fig. 5 Schematic illustration of the writing principle of volumetric nanoscale ODS and simulations.

a , Jablonski diagram of 2-isopropylthioxanthone photoinitiators for the explanation of polymerization by two-photon absorption and depolymerization by triplet–triplet absorption. The green arrows indicate the absorption of the two photons, the brown arrow indicates the radiative relaxation of the fluorescence, the blue arrow indicates the radiative relaxation of the phosphorescence, the grey dashed arrow indicates intramolecular vibrational redistribution (IVR), the red arrow indicates triplet–triplet absorption, the yellow arrows indicate intersystem crossing (ISC)/IVR (dashed arrow) or reverse ISC/IVR (solid arrow), and the black arrow indicates radical formation. The energy levels are not to scale. The solid horizontal lines indicate nonvibrational electronic states whereas the dashed horizontal lines indicate vibrationally excited electronic states. b , Principle of dual-beam nanoscale optical writing. A 515-nm femtosecond Gaussian laser beam initiates polymerization in a medium via two-photon absorption, and a 639-nm CW doughnut-shaped laser beam then deactivates locally the polymerization at the periphery of the focus, which reduces the polymerization volume to the subdiffractive level. c , Simulated profiles of photo-polymerization conversion rate versus deactivating intensity in a dual-beam writing process. The threshold was set to 42%, with the area above 42% representing the third state in Fig. 3 , and the area below 42% representing the second state in Fig. 3 . d and e , Simulated superresolution STED images of a 4 × 4 pattern formed by the 515-nm femtosecond writing laser beam without (d) and with (e) subsequent application of the 639-nm deactivating beam. f , Simulated confocal image of the pattern formed by the dual-beam writing configuration. g , Intensity profiles extracted from (d–f) .

Extended Data Fig. 6 Properties of the standard sample of Ru(bpy) 3 Cl 2 thin film and the aggregation-induced emission dye-doped photoresist (AIE-DDPR) film for characterization of QYs and fluorescence on–off contrast of the recorded spots.

a–c, (a) Chemical formula. The QY of Ru(bpy) 3 Cl 2 thin film is 7.3% which is calculated from the absorbance (b) and the fluorescence emission intensity (c) at an excitation wavelength λ  = 480 nm. d , Fluorescence intensity of the AIE-DDPR film at an excitation wavelength λ  = 480 nm before exposure to the femtosecond laser (0 mW, i.e., the second state in Fig. 3 ) and after exposure to the 515-nm femtosecond laser with various writing powers, i.e., 0.3–1.5 mW (i.e., the third state in Fig. 3 ), and the standard sample of Ru(bpy) 3 Cl 2 thin film. e , Photobleaching: fluorescence on–off contrast of a recorded spot probed by irradiation with a 480-nm pulsed laser. f – h , Fluorescence image obtained at 7 min ( f ), 27 min ( g ), and 134 min (h) after the beginning of excitation.

Extended Data Fig. 7 Comparison of fluorescence images and aggregation sizes of the recorded spots with the 515-nm femtosecond Gaussian laser beam only and dual-beam writing.

a , Fluorescence and optical images of the recorded spots at different writing powers of the 515-nm femtosecond laser beam, as measured in the optical path. b , Scanning electron microscopy (SEM) images and fluorescent images of diffraction-limited spots recorded by the 515-nm femtosecond Gaussian laser beam only and subdiffractive spots recorded by the dual-beam writing configuration. Scale bar: 1 µm. c and d , Superresolution imaging of densely arranged spots of a panda yin–yang pattern. Superresolution STED-image readouts of the recording patterns formed by the 515-nm femtosecond writing laser beam without (c) and with (d) subsequent application of the 639-nm CW deactivating beam. Insets: Magnified images of 1 × 2 recording spots and the original panda yin–yang pattern. e , Intensity profiles extracted from the areas marked with the dashed lines in the magnified images in (c) and (d) . The panda yin–yang pattern is discretized to a 21 × 21 dot matrix with a spacing of 112 nm.

Extended Data Fig. 8 ODS on optical base disc and fluorescence lifetime imaging of the recording areas.

a , A base disc comprising only substrate. b , A disc with a transparent-yellow circle of the aggregation-induced emission dye-doped photoresist (AIE-DDPR) that has been subsequently cured. c , Superresolution imaging of recording spots formed by the 515-nm femtosecond writing beam without and with the application of the 639-nm CW deactivating beam. d , Intensity profiles extracted from the areas marked with the white dashed lines in the red and blue boxes in (c) . The recording-spot sizes were 107 nm and 188 nm for dual-beam writing and single-beam writing, respectively. We had to scan a portion of the optical disc as the scanning stage could not accommodate a whole disc. e and f , Scanning fast fluorescence lifetime imaging microscopy (FLIM) image (e) and the corresponding FLIM histogram (f) for the recorded areas at different writing powers of the 515-nm femtosecond laser beam (the third state) and the background area with only ultraviolet curing (the second state). The recording areas were written at a scan speed of 2.5 µm/s and comprised parallel lines with a line spacing of 300 nm.

Extended Data Fig. 9 Lifetime and durability test of ODS.

a and b , Scanning fluorescence and white-light microscopic images of the recorded spots for the temperature stress condition of 130 °C and 120 °C. The time is incubation time. c and d , The intensities for different incubation times (c) and (d) were extracted from the fluorescence images (a) and (b) .

Supplementary information

Supplementary video 1.

A video of 100-layer recording on the AIE-DDPR film in mp4 format. The institute and university badges (‘SIOM’ and ‘USST’) and binary bits of encoded images of a tree and a flower were alternately written in the recording medium. The layer-to-layer distance is 1 μm.

Source Data Fig. 2

Source data fig. 3, source data fig. 4, source data extended data fig. 2, source data extended data fig. 5, source data extended data fig. 6, source data extended data fig. 7, source data extended data fig. 8, source data extended data fig. 9, rights and permissions.

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Zhao, M., Wen, J., Hu, Q. et al. A 3D nanoscale optical disk memory with petabit capacity. Nature 626 , 772–778 (2024). https://doi.org/10.1038/s41586-023-06980-y

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Published : 21 February 2024

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